Hit Solar Cell

INCREASING TUNNELING CURRENT IN A HIT hearty organisation THROUGH THICKNESS AND DOPING DENSITY VARIATION: A manakin BASED STUDY By Amreen Akhtar Shuaib Rahman Submitted to the Department of galvanizing and Electronic Engineering Faculty of accomplishments and Engineering east tungsten University in partial fulfillment of the requirements for the degree of bach of Science in Electrical and Electronic Engineering (B.Sc. in EEE) [Semester, year] clear By ________________ ________________ Thesis Advisor  Chairperson [Advisor name] [chairpersons name] abstraction Heterojunction solar cadres hurt proved to exceed the efficiency bar that homojunction solar cells find tried to cross for decades. Among the most efficient heterojunction solar cell buildings is the HIT structure, or Heterojunction with Intrinsic deoxidi ze Layer structure is the most popular. The simplest jump of HIT structure is: Amorphous P-type semiconductor/Intrinsic Semiconductor/Crystalline N-type semiconductor, or vice versa. In a heterojunction, due to the difference in bandgap of the materials, a effectiveness barrier forms that creates obstacle for the electrons/holes to travel from genius side to the other. such(prenominal) trapping of holes reduces the efficiency of the solar cell. However, a constituent these electrons/holes hand the potential barrier through Quantum Tunneling and create a tunneling rate of flow, which contributes to the boilers suit current; hence improving the efficiency. In this paper, the tunneling current of the simplest form of HIT structure is studied i.e. P-type a-Si/i-Si/N-type c-Si. The lengths of the P-side, constitutional layer and the N-side is varied to study how the thickness of the layers force the tunneling current. Also, the impact of doping densities of the P-side and N- side on the tunneling current is considered.! Varying these parameters (thickness and doping) an optimized combination of...If you want to uprise a full(a) essay, order it on our website: BestEssayCheap.com

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